VBL165R20S Specs and Replacement

Type Designator: VBL165R20S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 typ Ohm

Package: TO263

VBL165R20S substitution

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VBL165R20S datasheet

 ..1. Size:895K  cn vbsemi
 vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf pdf_icon

VBL165R20S

VBM165R20S / VBMB165R20S VBP165R20S / VBL165R20S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ul... See More ⇒

 7.1. Size:1102K  cn vbsemi
 vbl165r18.pdf pdf_icon

VBL165R20S

VBL165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.36 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche en... See More ⇒

 7.2. Size:1281K  cn vbsemi
 vbl165r04.pdf pdf_icon

VBL165R20S

VBL165R04 www.VBsemi.com N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to... See More ⇒

 7.3. Size:1406K  cn vbsemi
 vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBL165R20S

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener... See More ⇒

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Detailed specifications: VBL165R10, VBM165R12, VBMB165R12, VBL165R12, VBM165R18, VBM165R20S, VBMB165R20S, VBP165R20S, IRFP260, VBM1680, VBM16R02, VBMB16R02, VBE16R02, VBFB16R02, VBM16R04, VBMB16R04, VBE16R04

Keywords - VBL165R20S MOSFET specs

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