VBMB1615 Todos los transistores

 ..1. Size:626K  cn vbsemi
 vbmb1615.pdf

VBMB1615 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parame

 8.1. Size:800K  cn vbsemi
 vbmb165r20.pdf

VBMB165R20 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.17 Reduced switching and conduction losses Available Qg max. (nC) 109 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 31 Configurat

 8.2. Size:932K  cn vbsemi
 vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf

VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r

 8.3. Size:895K  cn vbsemi
 vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf

VBM165R20S / VBMB165R20S VBP165R20S / VBL165R20S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ul

 8.4. Size:1406K  cn vbsemi
 vbm165r10 vbmb165r10 vbl165r10.pdf

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener

 8.5. Size:1339K  cn vbsemi
 vbm165r12 vbmb165r12 vbl165r12.pdf

VBM165R12 / VBMB165R12/ VBL165R12 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS)

 8.6. Size:844K  cn vbsemi
 vbmb1606.pdf

VBMB1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 100 Material categorization 60 0.008 at VGS = 4.5 V 95 TO-220 FULLPAK D G S D G S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parame

 8.7. Size:1284K  cn vbsemi
 vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf

VBM165R10 / VBMB165R10 VBE165R10 / VBFB165R10 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy

 8.8. Size:1391K  cn vbsemi
 vbmb165r02.pdf

VBMB165R02 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 4 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 11 Ruggedness Qgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 5.2 Complia

 8.9. Size:921K  cn vbsemi
 vbm165r07s vbmb165r07s vbe165r07s vbfb165r07s.pdf

 8.10. Size:1723K  cn vbsemi
 vbmb1638.pdf

VBMB1638 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

 8.11. Size:1249K  cn vbsemi
 vbmb165r04.pdf

VBMB165R04 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to Ro

 8.12. Size:751K  cn vbsemi
 vbmb16r08.pdf

VBMB16R08 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 Available requirement RDS(on) ( )VGS = 10 V 1.0 Improved gate, avalanche and dynamic dV/dt Available Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single APPL

 8.13. Size:765K  cn vbsemi
 vbm16r04 vbmb16r04 vbe16r04 vbfb16r04.pdf

VBM16R04 / VBMB16R04 VBE16R04 / VBFB16R04 www.VBsemi.com N hannel 600 D S Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 2.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC)

 8.14. Size:1462K  cn vbsemi
 vbm16r02 vbmb16r02 vbe16r02 vbfb16r02.pdf

VBM16R02 / VBMB16R02 VBE16R02 / VBFB16R02 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 4.4 Repetitive Avalanche Rated Qg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20) Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20) Qgd (nC) 8.9 Available

 8.15. Size:1167K  cn vbsemi
 vbmb165r18.pdf

VBMB165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche e