All MOSFET. VBMB1615 Datasheet

 

VBMB1615 Datasheet and Replacement


   Type Designator: VBMB1615
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220FP
 

 VBMB1615 substitution

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VBMB1615 Datasheet (PDF)

 ..1. Size:626K  cn vbsemi
vbmb1615.pdf pdf_icon

VBMB1615

VBMB1615www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parame

 8.1. Size:800K  cn vbsemi
vbmb165r20.pdf pdf_icon

VBMB1615

VBMB165R20www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.17 Reduced switching and conduction lossesAvailableQg max. (nC) 109 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Qgd (nC) 31Configurat

 8.2. Size:932K  cn vbsemi
vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf pdf_icon

VBMB1615

VBM165R07 / VBMB165R07VBE165R07 / VBFB165R07www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy r

 8.3. Size:895K  cn vbsemi
vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf pdf_icon

VBMB1615

VBM165R20S / VBMB165R20SVBP165R20S / VBL165R20Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ul

Datasheet: VBMB1104N , VBMB1203M , VBMB1208N , VBMB1303 , VBMB1311 , VBMB155R18 , VBMB15R13 , VBMB1606 , 2N60 , VBMB1638 , VBMB165R02 , VBMB165R04 , VBMB165R18 , VBMB165R20 , VBMB16R08 , VBMB17R07 , VBMB185R05 .

History: RFP5P12 | IRF820ASPBF

Keywords - VBMB1615 MOSFET datasheet

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