VBZA4430 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZA4430

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 typ Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de VBZA4430 MOSFET

- Selecciónⓘ de transistores por parámetros

 

VBZA4430 datasheet

 ..1. Size:890K  cn vbsemi
vbza4430.pdf pdf_icon

VBZA4430

VBZA4430 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.005at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.006 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

 7.1. Size:492K  cn vbsemi
vbza4435.pdf pdf_icon

VBZA4430

VBZA4435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 8.1. Size:1128K  cn vbsemi
vbza4425.pdf pdf_icon

VBZA4430

VBZA4425 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.023at VGS = - 10 V - 7 100 % Rg Tested RoHS - 30 28 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V -5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D

 8.2. Size:1229K  cn vbsemi
vbza4410.pdf pdf_icon

VBZA4430

VBZA4410 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

Otros transistores... VBZ84, VBZA4042, VBZA4407, VBZA4409, VBZA4410, VBZA4412, VBZA4420, VBZA4425, 8205A, VBZA4435, VBZA4606, VBZA4611, VBZA4618, VBZA4800, VBZA4805, VBZA4850, VBZA4936