VBZA9435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBZA9435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 30(max) nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 455 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026(typ) Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET VBZA9435

VBZA9435 Datasheet (PDF)

..1. Size:1508K cn vbsemi
vbza9435.pdf

VBZA9435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.026at VGS = - 10 V - 6 100 % Rg TestedRoHS- 30 29 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V - 5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6

8.1. Size:1350K cn vbsemi
vbza9410.pdf

VBZA9410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

9.1. Size:2211K cn vbsemi
vbza9945.pdf

VBZA9945www.VBsemi.comDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.027RDS(on) () at VGS = 4.5 V 0.041ID (A) per leg8Configuration DualSO-8 DualD2D1 D2D2 5D16D1 78G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel MO

9.2. Size:459K cn vbsemi
vbza9936.pdf

VBZA9936www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

9.3. Size:2313K cn vbsemi
vbza9926.pdf

VBZA9926www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.015at VGS = 10 V 8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top

9.4. Size:1779K cn vbsemi
vbza9926a.pdf

VBZA9926Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

9.5. Size:1175K cn vbsemi
vbza9358.pdf

VBZA9358www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) (), ID (A)d, e Qg (Typ.)Typ. TrenchFET Power MOSFET0.013 at VGS = - 10 V - 8 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.017 at VGS = - 4.5 V - 6APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-8S1 1 D1

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: