VBZA9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZA9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30(max) nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 455 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026(typ) Ohm
Package: SO8
VBZA9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZA9435 Datasheet (PDF)
vbza9435.pdf
VBZA9435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.026at VGS = - 10 V - 6 100 % Rg TestedRoHS- 30 29 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V - 5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6
vbza9410.pdf
VBZA9410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
vbza9945.pdf
VBZA9945www.VBsemi.comDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.027RDS(on) () at VGS = 4.5 V 0.041ID (A) per leg8Configuration DualSO-8 DualD2D1 D2D2 5D16D1 78G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel MO
vbza9936.pdf
VBZA9936www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
vbza9926.pdf
VBZA9926www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.015at VGS = 10 V 8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top
vbza9926a.pdf
VBZA9926Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25
vbza9358.pdf
VBZA9358www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) (), ID (A)d, e Qg (Typ.)Typ. TrenchFET Power MOSFET0.013 at VGS = - 10 V - 8 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.017 at VGS = - 4.5 V - 6APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-8S1 1 D1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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