FDC5661N-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDC5661N-F085
   Código: .661N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 14.5 nC
   trⓘ - Tiempo de subida: 1.6 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
   Paquete / Cubierta: SSOT6

Búsqueda de reemplazo de MOSFET FDC5661N-F085

FDC5661N-F085 Datasheet (PDF)

6.1. Size:419K fairchild semi
fdc5661n f085.pdf

October 2008FDC5661N_F085tmN-Channel Logic Level PowerTrench MOSFET60V, 4A, 60m ApplicationsFeatures RDS(on) = 47m at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60m at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

9.1. Size:77K fairchild semi
fdc5612 f095.pdf

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

9.2. Size:140K fairchild semi
fdc5614p.pdf

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

9.3. Size:78K fairchild semi
fdc5612.pdf

9.4. Size:140K onsemi
fdc5614p.pdf

9.5. Size:177K onsemi
fdc5612.pdf

FDC561260V N-Channel PowerTrench MOSFETFeaturesGeneral Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 VThis N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventional Low gate charge (12.5nC typical).switching PWM controllers.These MOSFETs featur

9.6. Size:2795K cn vbsemi
fdc5614p.pdf

FDC5614Pwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.050 at VGS = -10 V -6.5-60 10.1 nC 0.060 at VGS = -4.5 V -5.1APPLICATIONS Load switches DC/DC converterTSOP-6 Top View(4) S1 6 (3) G3 mm 5 2 3 4 (1, 2, 5, 6) D2.85 mm

Otros transistores... FDC3512 , FDC3535 , FDC3601N , STU307S , FDC3612 , STU3055L , FDC365P , FDC5614P , IRF840 , FDC602P , FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , FDC6318P .

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