FDC5661N-F085 - описание и поиск аналогов

October 2008 FDC5661N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 4A, 60m Applications Features RDS(on) = 47m at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60m at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

FDC5612 60V N-Channel PowerTrench MOSFET Features General Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional Low gate charge (12.5nC typical). switching PWM controllers. These MOSFETs featur

FDC5614P www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.050 at VGS = -10 V -6.5 -60 10.1 nC 0.060 at VGS = -4.5 V -5.1 APPLICATIONS Load switches DC/DC converter TSOP-6 Top View (4) S 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm