VBZE100N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE100N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0092 typ Ohm

Encapsulados: TO252

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VBZE100N03 datasheet

 ..1. Size:1276K  cn vbsemi
 vbze100n03.pdf pdf_icon

VBZE100N03

VBZE100N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0092at VGS = 10 V 60 30 31 nC 0.011 at VGS = 4.5 V 50 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABS

 5.1. Size:1730K  cn vbsemi
 vbze100n02.pdf pdf_icon

VBZE100N03

VBZE100N02 www.VBsemi.com N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0025 at VGS = 4.5 V 160 20 85 nC 0.006at VGS = 2.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET

 7.1. Size:1105K  cn vbsemi
 vbze100p03.pdf pdf_icon

VBZE100N03

VBZE100P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.005 at VGS = - 10 V -110 RoHS* - 30 COMPLIANT 0.007 at VGS = - 4.5 V -90 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit

 8.1. Size:1030K  cn vbsemi
 vbze10n20.pdf pdf_icon

VBZE100N03

VBZE10N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN

MOSTRAR MÁS

Otros transistores... VBZB8205A, VBZC8205A, VBZC8205B, VBZC8810, VBZE04N03, VBZE06N02, VBZE06N03, VBZE100N02, TK10A60D, VBZE100P03, VBZE10N20, VBZE12N03, VBZE12N06, VBZE12N10, VBZE12P10, VBZE15N03, VBZE15N10