All MOSFET. VBZE100N03 Datasheet

 

VBZE100N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZE100N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 32(max) nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092(typ) Ohm
   Package: TO252

 VBZE100N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZE100N03 Datasheet (PDF)

 ..1. Size:1276K  cn vbsemi
 vbze100n03.pdf

VBZE100N03 VBZE100N03

VBZE100N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0092at VGS = 10 V 6030 31 nC0.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

 5.1. Size:1730K  cn vbsemi
 vbze100n02.pdf

VBZE100N03 VBZE100N03

VBZE100N02www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0025 at VGS = 4.5 V 16020 85 nC0.006at VGS = 2.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET

 7.1. Size:1105K  cn vbsemi
 vbze100p03.pdf

VBZE100N03 VBZE100N03

VBZE100P03www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.005 at VGS = - 10 V -110RoHS*- 30COMPLIANT0.007 at VGS = - 4.5 V -90STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Unit

 8.1. Size:1030K  cn vbsemi
 vbze10n20.pdf

VBZE100N03 VBZE100N03

VBZE10N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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