FDC602P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDC602P
   Código: .602'
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SSOT6

Búsqueda de reemplazo de MOSFET FDC602P

FDC602P Datasheet (PDF)

..1. Size:62K fairchild semi
fdc602p f095.pdf

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

..2. Size:65K fairchild semi
fdc602p.pdf

..3. Size:877K cn vbsemi
fdc602p.pdf

FDC602Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha

8.1. Size:211K fairchild semi
fdc6020c.pdf

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS

8.2. Size:212K tysemi
fdc6020c kdc6020c.pdf

SMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification KDC6020C(FDC6020C)( )SOT-23-6Unit: mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V)6 5 4DS(ON) GS R 39m (V = 2.5V)DS D P-ChannelV =-20V I =-4.2A0to0.1 RDS(ON) 55m (VGS =-4.5V)DS(ON) GS R 82m (V =-2.5V)1 2

9.1. Size:144K fairchild semi
fdc608pz.pdf

June 2006tmFDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductors advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye

9.2. Size:154K fairchild semi
fdc606p.pdf

December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchilds low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V

9.3. Size:174K fairchild semi
fdc6000nz.pdf

June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V gate version of Fairchild's Semiconductors advanced RDS(ON) = 28 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide ran

9.4. Size:90K fairchild semi
fdc604p.pdf

January 2001FDC604PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 33 m @ VGS = 4.5 VFairchilds low voltage PowerTrench process. It hasRDS(ON) = 43 m @ VGS = 2.5 Vbeen optimized for battery power managementRDS(ON) = 60 m @ VGS = 1.8 Vapplica

9.5. Size:244K fairchild semi
fdc6036p.pdf

February 2009 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses 5 A, 20 V. RDS(ON) = 44 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 64 m @ VGS = 2.5 V Packaged in FLMP SSOT-6, the RDS(ON) and thermal RDS(ON) = 95 m @ VGS = 1.8 V

9.6. Size:270K onsemi
fdc606p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.7. Size:202K onsemi
fdc604p.pdf

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