FDC602P PDF and Equivalents Search

 

FDC602P Specs and Replacement

Type Designator: FDC602P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 300 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SSOT6

FDC602P substitution

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FDC602P datasheet

 ..1. Size:62K  fairchild semi
fdc602p f095.pdf pdf_icon

FDC602P

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of ... See More ⇒

 ..2. Size:65K  fairchild semi
fdc602p.pdf pdf_icon

FDC602P

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of ... See More ⇒

 ..3. Size:877K  cn vbsemi
fdc602p.pdf pdf_icon

FDC602P

FDC602P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha... See More ⇒

 8.1. Size:211K  fairchild semi
fdc6020c.pdf pdf_icon

FDC602P

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS... See More ⇒

Detailed specifications: FDC3535 , FDC3601N , STU307S , FDC3612 , STU3055L , FDC365P , FDC5614P , FDC5661N-F085 , IRF540 , FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , FDC6318P , FDC6320C .

Keywords - FDC602P MOSFET specs

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