VBZE20N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE20N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 typ Ohm

Encapsulados: TO252

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VBZE20N03 datasheet

 ..1. Size:2035K  cn vbsemi
 vbze20n03.pdf pdf_icon

VBZE20N03

VBZE20N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.011 at VGS = 10 V 50 30 28nC 0.016 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSO

 6.1. Size:1054K  cn vbsemi
 vbze20n06.pdf pdf_icon

VBZE20N03

VBZE20N06 www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.023 at VGS = 10 V 45 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 7.1. Size:1435K  cn vbsemi
 vbze20n20.pdf pdf_icon

VBZE20N03

VBZE20N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

 7.2. Size:1418K  cn vbsemi
 vbze20n10.pdf pdf_icon

VBZE20N03

VBZE20N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (

MOSTRAR MÁS

Otros transistores... VBZE10N20, VBZE12N03, VBZE12N06, VBZE12N10, VBZE12P10, VBZE15N03, VBZE15N10, VBZE16N05, SI2302, VBZE20N06, VBZE20N10, VBZE20N20, VBZE20P03, VBZE20P06, VBZE2810, VBZE2N60, VBZE30N02