All MOSFET. VBZE20N03 Datasheet

 

VBZE20N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZE20N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35(max) nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: TO252

 VBZE20N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZE20N03 Datasheet (PDF)

 ..1. Size:2035K  cn vbsemi
 vbze20n03.pdf

VBZE20N03 VBZE20N03

VBZE20N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.011 at VGS = 10 V 5030 28nC0.016 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO

 6.1. Size:1054K  cn vbsemi
 vbze20n06.pdf

VBZE20N03 VBZE20N03

VBZE20N06www.VBsemi.comN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.023 at VGS = 10 V 45RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 7.1. Size:1435K  cn vbsemi
 vbze20n20.pdf

VBZE20N03 VBZE20N03

VBZE20N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

 7.2. Size:1418K  cn vbsemi
 vbze20n10.pdf

VBZE20N03 VBZE20N03

VBZE20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

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History: AP1430GEU6 | FDB8445 | SSS80N06A | HUF75333S3S | IXFK36N60P

 

 
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