VBZE20P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBZE20P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 43 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 20(max) nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 255 pF
Resistencia entre drenaje y fuente RDS(on): 0.033 Ohm
Paquete / Cubierta: TO252
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VBZE20P03 Datasheet (PDF)
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