VBZE2N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBZE2N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 18(max) nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: TO252

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VBZE2N60 Datasheet (PDF)

..1. Size:1391K cn vbsemi
vbze2n60.pdf

VBZE2N60www.VBsemi.comN-Channel 600 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 3.5 Repetitive Avalanche RatedQg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20)Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20)Qgd (nC) 8.9 Available in Tape and Reel

9.1. Size:1435K cn vbsemi
vbze20n20.pdf

VBZE20N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

9.2. Size:1413K cn vbsemi
vbze20p03.pdf

VBZE20P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 43 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.040 at VGS = - 4.5 V - 30APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-

9.3. Size:1418K cn vbsemi
vbze20n10.pdf

VBZE20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

9.4. Size:2035K cn vbsemi
vbze20n03.pdf

VBZE20N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.011 at VGS = 10 V 5030 28nC0.016 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO

9.5. Size:1054K cn vbsemi
vbze20n06.pdf

VBZE20N06www.VBsemi.comN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.023 at VGS = 10 V 45RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

9.6. Size:829K cn vbsemi
vbze20p06.pdf

VBZE20P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 40APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

9.7. Size:1710K cn vbsemi
vbze2810.pdf

VBZE2810www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) RDS(on) () Max. ID (A) Qg (Typ.)80 0.006at VGS = 10 V 100 19 nCAPPLICATIONS Primary Side SwitchingTO-252 Synchronous RectificationD DC/AC Inverters LED BacklightingGSDG SN-Channel MOSFETTop ViewABSOLUTE

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