VBZE2N60 Specs and Replacement

Type Designator: VBZE2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO252

VBZE2N60 substitution

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VBZE2N60 datasheet

 ..1. Size:1391K  cn vbsemi
vbze2n60.pdf pdf_icon

VBZE2N60

VBZE2N60 www.VBsemi.com N-Channel 600 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 3.5 Repetitive Avalanche Rated Qg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20) Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20) Qgd (nC) 8.9 Available in Tape and Reel ... See More ⇒

 9.1. Size:1435K  cn vbsemi
vbze20n20.pdf pdf_icon

VBZE2N60

VBZE20N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI... See More ⇒

 9.2. Size:1413K  cn vbsemi
vbze20p03.pdf pdf_icon

VBZE2N60

VBZE20P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 43 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.040 at VGS = - 4.5 V - 30 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-... See More ⇒

 9.3. Size:1418K  cn vbsemi
vbze20n10.pdf pdf_icon

VBZE2N60

VBZE20N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (... See More ⇒

Detailed specifications: VBZE16N05, VBZE20N03, VBZE20N06, VBZE20N10, VBZE20N20, VBZE20P03, VBZE20P06, VBZE2810, IRFZ24N, VBZE30N02, VBZE30N03, VBZE30N06, VBZE30N10, VBZE40N03, VBZE40N06, VBZE40N10, VBZE40P03

Keywords - VBZE2N60 MOSFET specs

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