VBZE40P03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE40P03

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 typ Ohm

Encapsulados: TO252

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VBZE40P03 datasheet

 ..1. Size:972K  cn vbsemi
vbze40p03.pdf pdf_icon

VBZE40P03

VBZE40P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET

 6.1. Size:1080K  cn vbsemi
vbze40p06.pdf pdf_icon

VBZE40P03

VBZE40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 60 16 0.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Co

 7.1. Size:1013K  cn vbsemi
vbze40p10.pdf pdf_icon

VBZE40P03

VBZE40P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directiv

 8.1. Size:1660K  cn vbsemi
vbze40n03.pdf pdf_icon

VBZE40P03

VBZE40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.008at VGS = 10 V 75 30 30 nC 0.011 at VGS = 4.5 V 50 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL

Otros transistores... VBZE2N60, VBZE30N02, VBZE30N03, VBZE30N06, VBZE30N10, VBZE40N03, VBZE40N06, VBZE40N10, IRF1405, VBZE40P06, VBZE40P10, VBZE4204, VBZE4286, VBZE45N03, VBZE50N03, VBZE50N04, VBZE50N06