VBZE40P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBZE40P06
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 130(max) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: TO252

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VBZE40P06 Datasheet (PDF)

..1. Size:1080K cn vbsemi
vbze40p06.pdf

VBZE40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 60 160.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Co

6.1. Size:972K cn vbsemi
vbze40p03.pdf

VBZE40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET

7.1. Size:1013K cn vbsemi
vbze40p10.pdf

VBZE40P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directiv

8.1. Size:1660K cn vbsemi
vbze40n03.pdf

VBZE40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.008at VGS = 10 V 7530 30 nC0.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

8.2. Size:2331K cn vbsemi
vbze40n10.pdf

VBZE40N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature1000.035at VGS = 10 V 30RoHS* Low Thermal Resistance PackageCOMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamet

8.3. Size:1582K cn vbsemi
vbze40n06.pdf

VBZE40N06www.VBsemi.comN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.035 at VGS = 10 V 30RoHS*600.051 at VGS = 4.5 V 23 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

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