VBZE40P06 Specs and Replacement

Type Designator: VBZE40P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 130 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO252

VBZE40P06 substitution

- MOSFET ⓘ Cross-Reference Search

 

VBZE40P06 datasheet

 ..1. Size:1080K  cn vbsemi
vbze40p06.pdf pdf_icon

VBZE40P06

VBZE40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 60 16 0.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Co... See More ⇒

 6.1. Size:972K  cn vbsemi
vbze40p03.pdf pdf_icon

VBZE40P06

VBZE40P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET ... See More ⇒

 7.1. Size:1013K  cn vbsemi
vbze40p10.pdf pdf_icon

VBZE40P06

VBZE40P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directiv... See More ⇒

 8.1. Size:1660K  cn vbsemi
vbze40n03.pdf pdf_icon

VBZE40P06

VBZE40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.008at VGS = 10 V 75 30 30 nC 0.011 at VGS = 4.5 V 50 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL... See More ⇒

Detailed specifications: VBZE30N02, VBZE30N03, VBZE30N06, VBZE30N10, VBZE40N03, VBZE40N06, VBZE40N10, VBZE40P03, 7N60, VBZE40P10, VBZE4204, VBZE4286, VBZE45N03, VBZE50N03, VBZE50N04, VBZE50N06, VBZE50P03

Keywords - VBZE40P06 MOSFET specs

 VBZE40P06 cross reference

 VBZE40P06 equivalent finder

 VBZE40P06 pdf lookup

 VBZE40P06 substitution

 VBZE40P06 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility