VBZE80N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE80N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 180 max pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO252

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VBZE80N10 datasheet

 ..1. Size:1381K  cn vbsemi
 vbze80n10.pdf pdf_icon

VBZE80N10

VBZE80N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % UIS tested 0.055 at VGS = 10 V 25 0.057 at VGS = 4.5 V 100 25 21nC 0.070 at VGS = 2.5 V 18 APPLICATIONS Primary side switch D TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

 7.1. Size:1328K  cn vbsemi
 vbze80n06.pdf pdf_icon

VBZE80N10

VBZE80N06 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.008 100 ID (A) Single Configuration D TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25

 7.2. Size:2019K  cn vbsemi
 vbze80n03.pdf pdf_icon

VBZE80N10

VBZE80N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007at VGS = 10 V 85 33 nC 30 0.011 at VGS = 4.5 V 50 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO

 8.1. Size:1008K  cn vbsemi
 vbze80p03.pdf pdf_icon

VBZE80N10

VBZE80P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.009 at VGS = - 10 V - 65 RoHS* - 30 0.012at VGS = - 4.5 V - 50 COMPLIANT S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gat

MOSTRAR MÁS

Otros transistores... VBZE5N20, VBZE60N02, VBZE60N03, VBZE70N03, VBZE75N03, VBZE7843, VBZE80N03, VBZE80N06, IRF3205, VBZE80P03, VBZE90N03, VBZE9N03, VBZFB06N02, VBZFB10N20, VBZFB12P10, VBZFB15N10, VBZFB20N06