All MOSFET. VBZE80N10 Datasheet

 

VBZE80N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZE80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO252

 VBZE80N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZE80N10 Datasheet (PDF)

 ..1. Size:1381K  cn vbsemi
 vbze80n10.pdf

VBZE80N10 VBZE80N10

VBZE80N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

 7.1. Size:1328K  cn vbsemi
 vbze80n06.pdf

VBZE80N10 VBZE80N10

VBZE80N06www.VBsemi.comN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.006 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.008100ID (A)SingleConfigurationDTO-252GG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

 7.2. Size:2019K  cn vbsemi
 vbze80n03.pdf

VBZE80N10 VBZE80N10

VBZE80N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007at VGS = 10 V 8533 nC300.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

 8.1. Size:1008K  cn vbsemi
 vbze80p03.pdf

VBZE80N10 VBZE80N10

VBZE80P03www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.009 at VGS = - 10 V - 65RoHS*- 300.012at VGS = - 4.5 V - 50 COMPLIANTSTO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AOT2146L | AOT410L

 

 
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