VBZFB40N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VBZFB40N06 Datasheet (PDF)

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VBZFB40N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.036 100 % Rg and UIS TestedID (A)25 Compliant to RoHS Directive 2002/95/ECConfiguration SingleAPPLICATIONS Power Supply- S

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VBZFB40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free15RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET20RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHS40ID ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D

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VBZFB40N10www.VBsemi.comN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-TabG D SSTop ViewN-

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VBZFB40P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURES-40 V Halogen-free According to IEC 61249-2-21VDSDefinitionRDS(on),typ VGS=10V 10 m TrenchFET Power MOSFETRDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC-55 AID APPLICATIONS Power Switch DC/DC ConvertersSTO-251GDG D STop View