VBZL80N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZL80N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 715 max pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 typ Ohm

Encapsulados: TO263

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VBZL80N06 datasheet

 ..1. Size:1391K  cn vbsemi
vbzl80n06.pdf pdf_icon

VBZL80N06

VBZL80N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS 60 V Package with low thermal resistance RDS(on) VGS = 10 V 6 m AEC-Q101 qualified d RDS(on) VGS = 4.5 V 11 m 100 % Rg and UIS tested ID 100 A Configuration Single TO-263 D G S S D D G G N-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS

 6.1. Size:1636K  cn vbsemi
vbzl80n04.pdf pdf_icon

VBZL80N06

VBZL80N04 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET 40 VDS V Maximum 175 C junction temperature 5 RDS(on) VGS = 10 V m 100 % Rg and UIS tested 6 RDS(on) VGS = 4.5 V m Material categorization 110 ID A for definitions of compliance please see Configuration Single D TO-263 G S S S D D G

 6.2. Size:2032K  cn vbsemi
vbzl80n03.pdf pdf_icon

VBZL80N06

VBZL80N03 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 175 C Junction Temperature 200 VDS V Low Thermal Resistance Package RDS(on) VGS = 10 V 48 m PWM Optimized for Fast Switching ID 40 A Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Isolated DC/DC Converters - Primary-Si

 6.3. Size:1613K  cn vbsemi
vbzl80n08.pdf pdf_icon

VBZL80N06

VBZL80N08 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS 80 V Maximum 175 C junction temperature RDS(on) VGS = 10 V 6 m 100 % Rg and UIS tested RDS(on) VGS = 4.5 V m 10 Material categorization ID 120 A for definitions of compliance please see Configuration Single D TO-263 G S S S D D G G

Otros transistores... VBZL30N06, VBZL45N03, VBZL50N06, VBZL60N03, VBZL60N06, VBZL70N03, VBZL80N03, VBZL80N04, IRLB4132, VBZL80N08, VBZM100N03, VBZM100N04, VBZM120N15, VBZM12P10, VBZM13N50, VBZM150N03, VBZM150N10