STU303S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

S TU/D303SS amHop Microelectronics C orp.Nov, 200716,P-C hannel E nhancement Mode Field E ffect TransistorFEATURESPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).RDS(ON) (mW) MaxV DS S IDR ugged and reliable.28 @ V GS =-10VS urface Mount Package.-30V -24A40 @ V GS = -4.5VESD ProctecedDDGS GSTU SERIES STD SERIESTO-252AA(D-P AK) TO-251(l-P

GreenProductS TU/D3030NLSS amHop Microelectronics C orp.Aug 08,2005N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.18 @ VGS = 10V30V 30ATO-252 and TO-251 Package.25 @ VGS =4.5VDDDGGSSGSTU SERIES STD SERIEST

GreenProductS TU309DHS amHop Microelectronics C orp.Apr 20 2007Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max22 @ VG S = 10V 34 @ VG S = -10V-30V -14A30V 18A34 @ VG S = 4.5V 54 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1

S TU309DS amHop Microelectronics C orp.Nov 22 2006Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max23 @ VG S = 10V 35 @ VG S = -10V-30V -14A30V 18A35 @ VG S = 4.5V 55 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1S 2S 1 N-ch S

GreenProductSTU/D30N15aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.22A150V 62 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIES STD SERIESTO-252AA (D-PAK) TO-251 (I-PAK)ABSOLUTE MAXIMUM RATING

STU30N01GreenProductSTD30N01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.30A 30 @ VGS=10V100VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKA

S TU/D302SS amHop Microelectronics C orp.Apr 03,2006N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATURESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.9 @ VGS =10V30V 50 ATO-252 and TO-251 Package.12 @ VGS =4.5VDDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)

GreenProductSTU/D30L01AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 30A 30 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA

GreenProductSTU/D307SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.5 @ VGS=-10VSuface Mount Package.-30V -53A14 @ VGS=-4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- P

GreenProductS TU/D3055LS amHop Microelectronics C orp.Nov,01 2006 ver1.3N-Channel Logic Level E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VGS = 10V25V 12ATO-252 and TO-251 Package.85 @ VGS =4.5VDDDGGSSGSTU SERIES STD SERI

GreenProductSTU/D30L01aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 30A 30 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA=