STU303S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STU303S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de STU303S MOSFET
STU303S datasheet
stu303s std303s.pdf
S TU/D303S S amHop Microelectronics C orp. Nov, 2007 16, P-C hannel E nhancement Mode Field E ffect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (mW) Max V DS S ID R ugged and reliable. 28 @ V GS =-10V S urface Mount Package. -30V -24A 40 @ V GS = -4.5V ESD Procteced D D G S G STU SERIES STD SERIES TO-252AA(D-P AK) TO-251(l-P
stu3030nls std3030nls.pdf
Green Product S TU/D3030NLS S amHop Microelectronics C orp. Aug 08,2005 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 18 @ VGS = 10V 30V 30A TO-252 and TO-251 Package. 25 @ VGS =4.5V D D D G G S S G STU SERIES STD SERIES T
stu309dh.pdf
Green Product S TU309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 22 @ VG S = 10V 34 @ VG S = -10V -30V -14A 30V 18A 34 @ VG S = 4.5V 54 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1
stu309d.pdf
S TU309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 23 @ VG S = 10V 35 @ VG S = -10V -30V -14A 30V 18A 35 @ VG S = 4.5V 55 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 S 1 N-ch S
Otros transistores... FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , FDC6318P , FDC6320C , IRFP260N , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C , STU16L01 , STU15N20 , FDC637BNZ .
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