VBZM80N10 Todos los transistores

 ..1. Size:810K  cn vbsemi
 vbzm80n10.pdf

VBZM80N10 www.VBsemi.com N-Channel 100-V (D-S) 175 C MOSFET PRODUCT SUMMARY FEATURES VDS (V) TrenchFET Power MOSFET 100 175 C Maximum Junction Temperature RDS(on) ( ) at VGS = 10 V 0.009 Compliant to RoHS Directive 2002/95/EC RDS(on) ( ) at VGS = 4.5 V 0.020 ID (A) 100 Configuration Single TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATIN

 7.1. Size:914K  cn vbsemi
 vbzm80n04.pdf

VBZM80N04 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 40 V 100 % Rg and UIS Tested 6 RDS(on) VGS = 10 V m RoHS ID 110 A APPLICATIONS COMPLIANT Configuration Single Synchronous Rectification Power Supplies TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

 7.2. Size:937K  cn vbsemi
 vbzm80n03.pdf

VBZM80N03 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0038 AEC-Q101 Qualifiedd ID (A) a 180 100 % Rg and UIS Tested Configuration Single D TO-220 G Top View S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

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 vbzm80n80.pdf

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 vbzm80n06.pdf

VBZM80N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.003 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.009 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002/9