WNM2020-3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WNM2020-3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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WNM2020-3 Datasheet (PDF)

..1. Size:911K cn vbsemi
wnm2020-3.pdf

WNM2020-3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

7.1. Size:440K willsemi
wnm2020.pdf

WNM2020WNM2020Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )D0.220@ VGS=4.5V20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) Dwith low gate charge. This device is suitable for

7.2. Size:167K tysemi
wnm2020.pdf

Product specificationWNM2020N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D3with low gate charge. This device is suitable for use in DC-DC convers

7.3. Size:1282K kexin
wnm2020.pdf

SMD Type MOSFETN-Channel MOSFETWNM2020 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 0.83 A1 2 RDS(ON) 310m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V)1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Ratings Ta = 2

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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