WNM2020-3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WNM2020-3 Datasheet (PDF)

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WNM2020-3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

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WNM2020WNM2020Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )D0.220@ VGS=4.5V20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) Dwith low gate charge. This device is suitable for

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Product specificationWNM2020N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D3with low gate charge. This device is suitable for use in DC-DC convers

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SMD Type MOSFETN-Channel MOSFETWNM2020 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 0.83 A1 2 RDS(ON) 310m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V)1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Ratings Ta = 2

Otros transistores... VBZP50N50S , VBZQA120N03 , VBZQA50N03 , VBZQA50P03 , VBZQA80N03 , VBZQF50N03 , VBZQF50P03 , WNM2016-3 , 8N60 , WPM2015-3-TR , WPM2341A-3-TR , XP132A1275SR , XP161A11A1PR , XP161A1355PR , XP202A0003PR , ZXMC6A09DN8T , ZXMN4A06GT .