WNM2020-3 Specs and Replacement

Type Designator: WNM2020-3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 typ Ohm

Package: SOT23

WNM2020-3 substitution

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WNM2020-3 datasheet

 ..1. Size:911K  cn vbsemi
 wnm2020-3.pdf pdf_icon

WNM2020-3

WNM2020-3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC... See More ⇒

 7.1. Size:440K  willsemi
 wnm2020.pdf pdf_icon

WNM2020-3

WNM2020 WNM2020 Http //www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) D 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D with low gate charge. This device is suitable for ... See More ⇒

 7.2. Size:167K  tysemi
 wnm2020.pdf pdf_icon

WNM2020-3

Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use in DC-DC convers... See More ⇒

 7.3. Size:1282K  kexin
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WNM2020-3

SMD Type MOSFET N-Channel MOSFET WNM2020 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 0.83 A 1 2 RDS(ON) 310m (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V) 1. Gate 2. Source D 3. Drain 3 1 2 G S Absolute Maximum Ratings Ta = 2... See More ⇒

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Detailed specifications: VBZP50N50S, VBZQA120N03, VBZQA50N03, VBZQA50P03, VBZQA80N03, VBZQF50N03, VBZQF50P03, WNM2016-3, IRFB7545, WPM2015-3-TR, WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, XP161A1355PR, XP202A0003PR, ZXMC6A09DN8T, ZXMN4A06GT

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