XP161A1355PR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: XP161A1355PR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: SOT89

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XP161A1355PR datasheet

 ..1. Size:841K  cn vbsemi
 xp161a1355pr.pdf pdf_icon

XP161A1355PR

XP161A1355PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw

 0.1. Size:309K  torex
 xp161a1355pr-g.pdf pdf_icon

XP161A1355PR

XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens

 7.1. Size:284K  torex
 xp161a1265pr-g.pdf pdf_icon

XP161A1355PR

XP161A1265PR-G ETR1123_003 Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

 7.2. Size:312K  torex
 xp161a11a1pr-g.pdf pdf_icon

XP161A1355PR

XP161A11A1PR-G ETR1122_003 Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

MOSTRAR MÁS

Otros transistores... VBZQF50N03, VBZQF50P03, WNM2016-3, WNM2020-3, WPM2015-3-TR, WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, MMIS60R580P, XP202A0003PR, ZXMC6A09DN8T, ZXMN4A06GT, ZXMP10A17GTA, ZXMP6A18DN8TA, NCE0102, NCE0103M, NCE0103Y