XP161A1355PR. Аналоги и основные параметры
Наименование производителя: XP161A1355PR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 220 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
Тип корпуса: SOT89
Аналог (замена) для XP161A1355PR
- подборⓘ MOSFET транзистора по параметрам
XP161A1355PR даташит
xp161a1355pr.pdf
XP161A1355PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw
xp161a1355pr-g.pdf
XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens
xp161a1265pr-g.pdf
XP161A1265PR-G ETR1123_003 Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit
xp161a11a1pr-g.pdf
XP161A11A1PR-G ETR1122_003 Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit
Другие IGBT... VBZQF50N03, VBZQF50P03, WNM2016-3, WNM2020-3, WPM2015-3-TR, WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, MMIS60R580P, XP202A0003PR, ZXMC6A09DN8T, ZXMN4A06GT, ZXMP10A17GTA, ZXMP6A18DN8TA, NCE0102, NCE0103M, NCE0103Y
History: IPI90R1K0C3
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