NCE0102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE0102
   Código: 0102'
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 5.2 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET NCE0102

NCE0102 Datasheet (PDF)

..1. Size:294K ncepower
nce0102.pdf

Pb Free Producthttp://www.ncepower.com NCE0102NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

0.1. Size:621K ncepower
nce0102e.pdf

NCE0102Ehttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0102E uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 2ADS DR

0.2. Size:287K ncepower
nce0102m.pdf

Pb Free Producthttp://www.ncepower.com NCE0102MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

0.3. Size:303K ncepower
nce0102z.pdf

Pb Free Producthttp://www.ncepower.com NCE0102ZNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

0.4. Size:312K ncepower
nce0102a.pdf

http://www.ncepower.com NCE0102ANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0102A uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)

0.5. Size:346K ncepower
nce0102b.pdf

http://www.ncepower.com NCE0102BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID = 1.8A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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