NCE0110AK Todos los transistores

 ..1. Size:448K  ncepower
 nce0110ak.pdf

Pb Free Product http //www.ncepower.com NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

 6.1. Size:425K  ncepower
 nce0110as.pdf

Pb Free Product NCE0110AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)

 7.1. Size:402K  ncepower
 nce0110k.pdf

Pb Free Product http //www.ncepower.com NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON)

 8.1. Size:441K  1
 nce0117k.pdf

NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 8.2. Size:373K  ncepower
 nce0117.pdf

Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 8.3. Size:416K  ncepower
 nce0115k.pdf

 8.4. Size:653K  ncepower
 nce0117ak.pdf

NCE0117AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =17A DS D R

 8.5. Size:922K  ncepower
 nce011n30gu.pdf

NCE011N30GU http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE011N30GU uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =325A DS(ON) DS D be used in a wide variety of applications. R =0.75m (typical) @ V =10V DS(ON) GS R =1.5m (typical) @ V =4.5V Application DS(ON) GS

 8.6. Size:436K  ncepower
 nce0117k.pdf

Pb Free Product http //www.ncepower.com NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 8.7. Size:422K  ncepower
 nce0115ak.pdf

http //www.ncepower.com NCE0115AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

 8.8. Size:355K  ncepower
 nce0117i.pdf

NCE0117I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)

 8.9. Size:833K  cn vbsemi
 nce0117.pdf

NCE0117 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI