NCE0110AK Datasheet and Replacement
Type Designator: NCE0110AK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO252
NCE0110AK substitution
NCE0110AK Datasheet (PDF)
nce0110ak.pdf

Pb Free Producthttp://www.ncepower.com NCE0110AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)
nce0110as.pdf

Pb Free ProductNCE0110AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)
nce0110k.pdf

Pb Free Producthttp://www.ncepower.com NCE0110KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON)
nce0117k.pdf

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
Datasheet: ZXMN4A06GT , ZXMP10A17GTA , ZXMP6A18DN8TA , NCE0102 , NCE0103M , NCE0103Y , NCE0106R , NCE0106Z , IRF840 , NCE0110AS , NCE0110K , NCE0115K , NCE0117I , NCE0125AI , NCE0125AK , NCE0130A , NCE0130KA .
Keywords - NCE0110AK MOSFET datasheet
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