NCE0140K2 Todos los transistores

 

NCE0140K2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0140K2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO252
 

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NCE0140K2 Datasheet (PDF)

 ..1. Size:410K  ncepower
 nce0140k2.pdf pdf_icon

NCE0140K2

Pb Free Producthttp://www.ncepower.com NCE0140K2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 6.1. Size:402K  ncepower
 nce0140ka.pdf pdf_icon

NCE0140K2

Pb Free ProductNCE0140KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 7.1. Size:318K  ncepower
 nce0140ia.pdf pdf_icon

NCE0140K2

Pb Free ProductNCE0140IAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 7.2. Size:752K  ncepower
 nce0140i2.pdf pdf_icon

NCE0140K2

http://www.ncepower.comNCE0140I2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140I2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40ADS DR

MOSTRAR MÁS

Otros transistores... NCE0110AS , NCE0110K , NCE0115K , NCE0117I , NCE0125AI , NCE0125AK , NCE0130A , NCE0130KA , IRFB4110 , NCE0140KA , NCE0157 , NCE0157A2 , NCE0157D , NCE01H10 , NCE01H10D , NCE01H11 , NCE01H13 .

History: 2N7002BKMB | SPD08P06PG | 2N7002-7-F | 2N7000RLRPG | IPP100N06S3L-04 | 2N7000RLRA | 2N7000RLRMG

 

 
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