NCE0157 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0157

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de NCE0157 MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE0157 datasheet

 ..1. Size:374K  ncepower
nce0157.pdf pdf_icon

NCE0157

Pb Free Product http //www.ncepower.com NCE0157 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 0.1. Size:701K  ncepower
nce0157g.pdf pdf_icon

NCE0157

http //www.ncepower.com NCE0157G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =100V,I =57A DS(ON) DS D used in a wide variety of applications. R

 0.2. Size:631K  ncepower
nce0157a2d.pdf pdf_icon

NCE0157

Pb Free Product http //www.ncepower.com NCE0157A2D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2D uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =57A DS D R

 0.3. Size:655K  ncepower
nce0157a.pdf pdf_icon

NCE0157

Pb Free Product http //www.ncepower.com NCE0157A2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =57A DS D R

Otros transistores... NCE0115K, NCE0117I, NCE0125AI, NCE0125AK, NCE0130A, NCE0130KA, NCE0140K2, NCE0140KA, IRFP260N, NCE0157A2, NCE0157D, NCE01H10, NCE01H10D, NCE01H11, NCE01H13, NCE01H21T, NCE01P03S