Справочник MOSFET. NCE0157

 

NCE0157 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE0157
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 57 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 95 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCE0157

 

 

NCE0157 Datasheet (PDF)

 ..1. Size:374K  ncepower
 nce0157.pdf

NCE0157 NCE0157

Pb Free Producthttp://www.ncepower.com NCE0157NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 0.1. Size:701K  ncepower
 nce0157g.pdf

NCE0157 NCE0157

http://www.ncepower.comNCE0157GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =100V,I =57ADS(ON) DS Dused in a wide variety of applications. R

 0.2. Size:631K  ncepower
 nce0157a2d.pdf

NCE0157 NCE0157

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 0.3. Size:655K  ncepower
 nce0157a.pdf

NCE0157 NCE0157

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 0.4. Size:315K  ncepower
 nce0157d.pdf

NCE0157 NCE0157

Pb Free Producthttp://www.ncepower.com NCE0157DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 0.5. Size:436K  ncepower
 nce0157ak.pdf

NCE0157 NCE0157

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 0.6. Size:335K  ncepower
 nce0157a2.pdf

NCE0157 NCE0157

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

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