NCE0157D Todos los transistores

 

NCE0157D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0157D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO263
 

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NCE0157D Datasheet (PDF)

 ..1. Size:315K  ncepower
 nce0157d.pdf pdf_icon

NCE0157D

Pb Free Producthttp://www.ncepower.com NCE0157DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 7.1. Size:701K  ncepower
 nce0157g.pdf pdf_icon

NCE0157D

http://www.ncepower.comNCE0157GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =100V,I =57ADS(ON) DS Dused in a wide variety of applications. R

 7.2. Size:374K  ncepower
 nce0157.pdf pdf_icon

NCE0157D

Pb Free Producthttp://www.ncepower.com NCE0157NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 7.3. Size:631K  ncepower
 nce0157a2d.pdf pdf_icon

NCE0157D

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

MOSTRAR MÁS

Otros transistores... NCE0125AI , NCE0125AK , NCE0130A , NCE0130KA , NCE0140K2 , NCE0140KA , NCE0157 , NCE0157A2 , AON6414A , NCE01H10 , NCE01H10D , NCE01H11 , NCE01H13 , NCE01H21T , NCE01P03S , NCE01P13K , NCE01P18D .

History: TMPF9N90 | 2SK1295 | SSF11NS60UF | STF6N62K3 | AJCS160N08I | FS10SM-10 | RJK0222DNS

 

 
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