STU15N20 Todos los transistores

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STU15N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU15N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 78 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 85 pF

Resistencia drenaje-fuente RDS(on): 0.235 Ohm

Empaquetado / Estuche: TO252_DPAK

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STU15N20 Datasheet (PDF)

1.1. stu15n20_std15n20.pdf Size:148K _samhop

STU15N20
STU15N20

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

5.1. std150n3llh6_stp150n3llh6_stu150n3llh6.pdf Size:945K _st

STU15N20
STU15N20

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 ? , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 ? 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 ? 80 A 1 1 STu150N3LLH6 30 V 0.0033 ? 80 A IPAK DPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 High avalanche ruggedne

5.2. stu15l01_std15l01.pdf Size:149K _samhop

STU15N20
STU15N20

Green Product STU/D15L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 145 @ VGS=10V TO-252 and TO-251 Package. 15A 100V 195 @ VGS=4.5V Halogen free. G S STU SERIES STD SERIES ( ) TO - 252AA D- PA

5.3. stu1530pl_std1530pl.pdf Size:98K _samhop

STU15N20
STU15N20

S TU/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y FEATUR ES R DS (ON) ( m Ω ) Max VDS S ID S uper high dense cell design for low R DS (ON). R ugged and reliable. 45 @ VGS =-10V -30V -20A TO-252 and TO-251 Package. 60 @ VGS = -4.5V D D G G S SDU SERIES SDD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABS

Otros transistores... FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C , STU16L01 , IRFB3306 , FDC637BNZ , FDC638APZ , FDC6401N , FDC6420C , STU15L01 , FDC642P , FDC642P_F085 , FDC655BN .

 


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Introduzca al menos 1 números o letras