All MOSFET. STU15N20 Datasheet

 

STU15N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: STU15N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 78 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Total Gate Charge (Qg): 64 nC

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.235 Ohm

Package: TO252, DPAK

STU15N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU15N20 Datasheet (PDF)

1.1. stu15n20 std15n20.pdf Size:148K _samhop

STU15N20
STU15N20

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

5.1. std150n3llh6 stp150n3llh6 stu150n3llh6.pdf Size:945K _st

STU15N20
STU15N20

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 Ω 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 Ω 80 A 1 1 STu150N3LLH6 30 V 0.0033 Ω 80 A IPAK DPAK ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) 3 2 ■ Hi

5.2. stu15l01 std15l01.pdf Size:149K _samhop

STU15N20
STU15N20

Green Product STU/D15L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 145 @ VGS=10V TO-252 and TO-251 Package. 15A 100V 195 @ VGS=4.5V Halogen free. G S STU SERIES STD SERIES ( ) TO - 252AA D- PA

 5.3. stu1530pl std1530pl.pdf Size:98K _samhop

STU15N20
STU15N20

S TU/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y FEATUR ES R DS (ON) ( m Ω ) Max VDS S ID S uper high dense cell design for low R DS (ON). R ugged and reliable. 45 @ VGS =-10V -30V -20A TO-252 and TO-251 Package. 60 @ VGS = -4.5V D D G G S SDU SERIES SDD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABS

Datasheet: FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C , STU16L01 , IRFB3306 , FDC637BNZ , FDC638APZ , FDC6401N , FDC6420C , STU15L01 , FDC642P , FDC642P_F085 , FDC655BN .

 

 
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