NCE01P18D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE01P18D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 129 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET NCE01P18D
NCE01P18D Datasheet (PDF)
nce01p18d.pdf
http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
nce01p18l.pdf
http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
nce01p18.pdf
http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR
nce01p18k.pdf
Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918