Справочник MOSFET. NCE01P18D

 

NCE01P18D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE01P18D
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 70 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 18 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 70 nC
   Время нарастания (tr): 73 ns
   Выходная емкость (Cd): 129 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
   Тип корпуса: TO263

 Аналог (замена) для NCE01P18D

 

 

NCE01P18D Datasheet (PDF)

 ..1. Size:562K  ncepower
nce01p18d.pdf

NCE01P18D NCE01P18D

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.1. Size:343K  ncepower
nce01p18l.pdf

NCE01P18D NCE01P18D

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.2. Size:713K  ncepower
nce01p18.pdf

NCE01P18D NCE01P18D

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

 6.3. Size:430K  ncepower
nce01p18k.pdf

NCE01P18D NCE01P18D

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

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