FDC637BNZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2007FDC637BNZtmN-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2Athat has been especially tailored to minimize the on-sta

September 2007FDC637BNZtmN-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2Athat has been especially tailored to minimize the on-sta

FDC637BNZwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC

November 1999FDC637ANSingle N-Channel, 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 Vusing Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 Vto minimize on-state resistance and yet maintain lo

FDC637ANSingle N-Channel, 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 Vusing ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 Vto minimize on-state resistance and yet maintain low gate charge for

FDC637ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC