NCE0224 Todos los transistores

 

NCE0224 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0224
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 87.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO220
 

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NCE0224 Datasheet (PDF)

 ..1. Size:319K  ncepower
 nce0224.pdf pdf_icon

NCE0224

NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)

 0.1. Size:326K  ncepower
 nce0224f.pdf pdf_icon

NCE0224

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 0.2. Size:314K  ncepower
 nce0224af.pdf pdf_icon

NCE0224

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 0.3. Size:344K  ncepower
 nce0224d.pdf pdf_icon

NCE0224

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P03S , NCE01P13K , NCE01P18D , NCE01P18K , NCE01P30 , NCE0202M , NCE0202ZA , NCE0208KA , 12N60 , NCE0224D , NCE0224K , NCE0240 , NCE0240F , NCE0260 , NCE0275T , NCE1216 , NCE12P09S .

History: HD5N50 | MTP10N10 | IRLR7821C | NTMS4807NR2G | SQ4005EY | 2SK3424-ZJ | HSP200N02

 

 
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