Справочник MOSFET. NCE0224

 

NCE0224 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0224
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 87.2 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE0224

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0224 Datasheet (PDF)

 ..1. Size:319K  ncepower
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NCE0224

NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)

 0.1. Size:326K  ncepower
nce0224f.pdfpdf_icon

NCE0224

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 0.2. Size:314K  ncepower
nce0224af.pdfpdf_icon

NCE0224

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 0.3. Size:344K  ncepower
nce0224d.pdfpdf_icon

NCE0224

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

Другие MOSFET... NCE01P03S , NCE01P13K , NCE01P18D , NCE01P18K , NCE01P30 , NCE0202M , NCE0202ZA , NCE0208KA , 12N60 , NCE0224D , NCE0224K , NCE0240 , NCE0240F , NCE0260 , NCE0275T , NCE1216 , NCE12P09S .

History: SQM120N02-1M3L | FIR120N055PG | ST2342 | PTA04N100 | IRFNG40 | RUH1H150S-AR | SM1A11NSF

 

 
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