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NCE0275T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0275T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO247
 

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NCE0275T Datasheet (PDF)

 ..1. Size:332K  ncepower
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NCE0275T

Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 7.1. Size:657K  ncepower
nce0275d.pdf pdf_icon

NCE0275T

http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

 7.2. Size:653K  ncepower
nce0275.pdf pdf_icon

NCE0275T

http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

 8.1. Size:735K  ncepower
nce0270t.pdf pdf_icon

NCE0275T

http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR

Otros transistores... NCE0202ZA , NCE0208KA , NCE0224 , NCE0224D , NCE0224K , NCE0240 , NCE0240F , NCE0260 , SPP20N60C3 , NCE1216 , NCE12P09S , NCE1502R , NCE1503S , NCE1540K , NCE1550 , NCE1570 , NCE2003 .

History: SST177 | IRFL024NPBF | RU30120M3 | SSF20N60S | TK7P50D | IPP08CNE8NG | IRFP4568

 

 
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