NCE0275T. Аналоги и основные параметры

Наименование производителя: NCE0275T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 360 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 18 ns

Cossⓘ - Выходная емкость: 950 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: TO247

Аналог (замена) для NCE0275T

- подборⓘ MOSFET транзистора по параметрам

 

NCE0275T даташит

 ..1. Size:332K  ncepower
 nce0275t.pdf pdf_icon

NCE0275T

Pb Free Product http //www.ncepower.com NCE0275T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 7.1. Size:657K  ncepower
 nce0275d.pdf pdf_icon

NCE0275T

http //www.ncepower.com NCE0275D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275D uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in automotive applications and a wide variety of other applications. General Features V =200V,I =75A Schematic diagram DSS D R

 7.2. Size:653K  ncepower
 nce0275.pdf pdf_icon

NCE0275T

http //www.ncepower.com NCE0275 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in DS(ON) automotive applications and a wide variety of other applications. General Features V =200V,I =75A Schematic diagram DSS D R

 8.1. Size:735K  ncepower
 nce0270t.pdf pdf_icon

NCE0275T

http //www.ncepower.com NCE0270T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0270T uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =200V,I =70A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE0202ZA, NCE0208KA, NCE0224, NCE0224D, NCE0224K, NCE0240, NCE0240F, NCE0260, K3569, NCE1216, NCE12P09S, NCE1502R, NCE1503S, NCE1540K, NCE1550, NCE1570, NCE2003