Справочник MOSFET. NCE0275T

 

NCE0275T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0275T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 360 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 950 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для NCE0275T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0275T Datasheet (PDF)

 ..1. Size:332K  ncepower
nce0275t.pdfpdf_icon

NCE0275T

Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 7.1. Size:657K  ncepower
nce0275d.pdfpdf_icon

NCE0275T

http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

 7.2. Size:653K  ncepower
nce0275.pdfpdf_icon

NCE0275T

http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

 8.1. Size:735K  ncepower
nce0270t.pdfpdf_icon

NCE0275T

http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR

Другие MOSFET... NCE0202ZA , NCE0208KA , NCE0224 , NCE0224D , NCE0224K , NCE0240 , NCE0240F , NCE0260 , SPP20N60C3 , NCE1216 , NCE12P09S , NCE1502R , NCE1503S , NCE1540K , NCE1550 , NCE1570 , NCE2003 .

History: FCP130N60 | KF13N50P | UPA2521T1H | NCEP25N10AQ | WMO12P06TS | SI2328DS | SRM10N60TF

 

 
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