NCE1502R Todos los transistores

 

NCE1502R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE1502R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT223
 

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NCE1502R Datasheet (PDF)

 ..1. Size:301K  ncepower
nce1502r.pdf pdf_icon

NCE1502R

Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

 8.1. Size:365K  ncepower
nce1503s.pdf pdf_icon

NCE1502R

http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)

 8.2. Size:366K  ncepower
nce1505s.pdf pdf_icon

NCE1502R

Pb Free Producthttp://www.ncepower.com NCE1505SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)

 8.3. Size:331K  ncepower
nce1507ak.pdf pdf_icon

NCE1502R

http://www.ncepower.com NCE1507AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)

Otros transistores... NCE0224D , NCE0224K , NCE0240 , NCE0240F , NCE0260 , NCE0275T , NCE1216 , NCE12P09S , AON7410 , NCE1503S , NCE1540K , NCE1550 , NCE1570 , NCE2003 , NCE2007N , NCE2010E , NCE2030 .

History: MTE65N20H8 | STB24N65M2 | PHP36N06E | IRLZ44S | JSM36326 | TK7P60W

 

 
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