NCE1502R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE1502R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 36 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
Тип корпуса: SOT223
NCE1502R Datasheet (PDF)
nce1502r.pdf
Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
nce1503s.pdf
http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)
nce1505s.pdf
Pb Free Producthttp://www.ncepower.com NCE1505SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)
nce1507ak.pdf
http://www.ncepower.com NCE1507AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)
nce1504r.pdf
http://www.ncepower.com NCE1504RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)
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