NCE1503S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE1503S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 13.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de NCE1503S MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE1503S datasheet

 ..1. Size:365K  ncepower
 nce1503s.pdf pdf_icon

NCE1503S

http //www.ncepower.com NCE1503S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)

 8.1. Size:366K  ncepower
 nce1505s.pdf pdf_icon

NCE1503S

Pb Free Product http //www.ncepower.com NCE1505S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)

 8.2. Size:331K  ncepower
 nce1507ak.pdf pdf_icon

NCE1503S

http //www.ncepower.com NCE1507AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)

 8.3. Size:301K  ncepower
 nce1502r.pdf pdf_icon

NCE1503S

Pb Free Product http //www.ncepower.com NCE1502R NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE0224K, NCE0240, NCE0240F, NCE0260, NCE0275T, NCE1216, NCE12P09S, NCE1502R, SKD502T, NCE1540K, NCE1550, NCE1570, NCE2003, NCE2007N, NCE2010E, NCE2030, NCE2030K