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NCE2007N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE2007N
   Código: 2007N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.5 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 6.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
   Paquete / Cubierta: SOT23

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NCE2007N Datasheet (PDF)

 ..1. Size:344K  ncepower
nce2007n.pdf

NCE2007N
NCE2007N

Pb Free Producthttp://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Ge

 0.1. Size:322K  ncepower
nce2007ns.pdf

NCE2007N
NCE2007N

http://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A

 8.1. Size:346K  ncepower
nce2008e.pdf

NCE2007N
NCE2007N

Pb Free Producthttp://www.ncepower.com NCE2008ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.2. Size:352K  ncepower
nce2003.pdf

NCE2007N
NCE2007N

Pb Free Producthttp://www.ncepower.com NCE2003N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

 8.3. Size:270K  ncepower
nce2004ne.pdf

NCE2007N
NCE2007N

Pb Free Producthttp://www.ncepower.com NCE2004NENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.4. Size:287K  ncepower
nce2008n.pdf

NCE2007N
NCE2007N

http://www.ncepower.com NCE2008NSNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE2008N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features

 8.5. Size:313K  ncepower
nce2006y.pdf

NCE2007N
NCE2007N

http://www.ncepower.com NCE2006YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON)

 8.6. Size:757K  ncepower
nce2006ne.pdf

NCE2007N
NCE2007N

NCE2006NEhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE2006NE uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications .It is ESD protested.Schematic diagramGeneral Features V = 20V,I =7ADS D

 8.7. Size:278K  ncepower
nce2004y.pdf

NCE2007N
NCE2007N

NCE2004Yhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =4A RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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